https://openalex.org/T10472
This cluster of papers focuses on the advances in atomic layer deposition (ALD) technology, particularly in the context of high-k dielectrics, gate oxides, and semiconductor devices. It covers topics such as thin film growth, dielectric breakdown mechanisms, metal gate transistors, interface engineering, and the impact of negative bias temperature instability (NBTI) degradation on device performance.
@prefix oasubfields: <https://openalex.org/subfields/> .
@prefix openalex: <https://lambdamusic.github.io/openalex-hacks/ontology/> .
@prefix owl: <http://www.w3.org/2002/07/owl#> .
@prefix rdfs: <http://www.w3.org/2000/01/rdf-schema#> .
@prefix skos: <http://www.w3.org/2004/02/skos/core#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .
<https://openalex.org/T10472> a skos:Concept ;
rdfs:label "Atomic Layer Deposition Technology"@en ;
rdfs:isDefinedBy openalex: ;
owl:sameAs <https://en.wikipedia.org/wiki/Atomic_layer_deposition>,
<https://openalex.org/T10472> ;
skos:broader oasubfields:2208 ;
skos:definition "This cluster of papers focuses on the advances in atomic layer deposition (ALD) technology, particularly in the context of high-k dielectrics, gate oxides, and semiconductor devices. It covers topics such as thin film growth, dielectric breakdown mechanisms, metal gate transistors, interface engineering, and the impact of negative bias temperature instability (NBTI) degradation on device performance."@en ;
skos:inScheme openalex: ;
skos:prefLabel "Atomic Layer Deposition Technology"@en ;
openalex:cited_by_count 2175259 ;
openalex:works_count 162838 .