https://openalex.org/T10099
This cluster of papers focuses on the first-principles calculations, properties, and applications of III-nitride semiconductors, particularly Gallium Nitride (GaN) and its alloys. It covers topics such as defects and impurities, band parameters, high-power light-emitting diodes (LEDs), AlGaN/GaN HEMTs, nanowires, UV LEDs, and their applications in solid-state lighting.
@prefix oasubfields: <https://openalex.org/subfields/> .
@prefix openalex: <https://lambdamusic.github.io/openalex-hacks/ontology/> .
@prefix owl: <http://www.w3.org/2002/07/owl#> .
@prefix rdfs: <http://www.w3.org/2000/01/rdf-schema#> .
@prefix skos: <http://www.w3.org/2004/02/skos/core#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .
<https://openalex.org/T10099> a skos:Concept ;
rdfs:label "First-Principles Calculations for III-Nitride Semiconductors"@en ;
rdfs:isDefinedBy openalex: ;
owl:sameAs <https://en.wikipedia.org/wiki/III-nitride_semiconductor>,
<https://openalex.org/T10099> ;
skos:broader oasubfields:3104 ;
skos:definition "This cluster of papers focuses on the first-principles calculations, properties, and applications of III-nitride semiconductors, particularly Gallium Nitride (GaN) and its alloys. It covers topics such as defects and impurities, band parameters, high-power light-emitting diodes (LEDs), AlGaN/GaN HEMTs, nanowires, UV LEDs, and their applications in solid-state lighting."@en ;
skos:inScheme openalex: ;
skos:prefLabel "First-Principles Calculations for III-Nitride Semiconductors"@en ;
openalex:cited_by_count 1586488 ;
openalex:works_count 107576 .